Paper
10 August 1994 Application of laser-induced microwave photoconductivity in diagnostics of semiconductor surface layers
Alexander A. Manenkov, Sergei Yurievich Sokolov, Sergei Yu. Popov
Author Affiliations +
Proceedings Volume 2097, Laser Applications; (1994) https://doi.org/10.1117/12.183145
Event: Laser Optics, 1993, St. Petersburg, Russian Federation
Abstract
The potentials of laser-induced microwave photoconductivity (LMP) as a diagnostic method for semiconductor surface studies are considered in this paper. The principals and practical realization aspects including a block-diagram and technical characteristics of the LMP apparatus, and some experimental data on electron-recombination properties of Si and GaAs surfaces are presented. The data include investigation of non equilibrium carrier relaxation channels and rates, influence of various defects (traps, adhesion centers, dislocations etc.), and spatial variations of these relaxation characteristics in surface layers modified with different procedures (ion implantation, laser annealing, mechanical treatment). Among the remote action of surface modification and interaction of locally modified zones. These effects are shown to be very important in the physics and technology of semiconductor surface modification. It is concluded that the LMP method is very informative diagnostic tool for testing and studying of semiconductor surfaces and device structures used in microelectronics, power electronics and optoelectronics.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Alexander A. Manenkov, Sergei Yurievich Sokolov, and Sergei Yu. Popov "Application of laser-induced microwave photoconductivity in diagnostics of semiconductor surface layers", Proc. SPIE 2097, Laser Applications, (10 August 1994); https://doi.org/10.1117/12.183145
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KEYWORDS
Semiconductors

Microwave radiation

Semiconductor lasers

Diagnostics

Pulsed laser operation

Silicon

Laser applications

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