Monolithic integration of a semiconductor preamplifier with a semiconductor tapered power amplifier

Ping-Hui S. Yeh; I.-Fan Wu; Shijun Jiang; Mario Dagenais

doi:10.1117/12.176604

1 June 1994 Monolithic integration of a semiconductor preamplifier with a semiconductor tapered power amplifier

Ping-Hui S. Yeh, I.-Fan Wu, Shijun Jiang, Mario Dagenais

Proceedings Volume 2148, Laser Diode Technology and Applications VI; (1994) https://doi.org/10.1117/12.176604
Event: OE/LASE '94, 1994, Los Angeles, CA, United States

Abstract

Recent progress on the monolithic integration of an index-guided single-lateral-mode preamplifier with a tapered semiconductor optical amplifier is reported. The suppression of the amplified spontaneous emission as a function of coupled input power and bias current is studied. With a coupled input power of only 1.2 mW, more than 1 W amplified output power is obtained at 810 nm, corresponding to 29-dB internal large-signal gain. The far-field pattern is dominated by a diffraction-limited single lobe. A new self-aligned dissipating grid, which improves the amplified- signal-to-total-output-power ratio from 72% to over 85%, is described.

Citation Download Citation

Ping-Hui S. Yeh, I.-Fan Wu, Shijun Jiang, and Mario Dagenais "Monolithic integration of a semiconductor preamplifier with a semiconductor tapered power amplifier", Proc. SPIE 2148, Laser Diode Technology and Applications VI, (1 June 1994); https://doi.org/10.1117/12.176604

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