Paper
16 May 1994 Role of process in obtaining optimum lithographic information from chemically amplified resists
Charles R. Szmanda, Theodore H. Fedynyshyn, William E. Houck, Jonathan C. Root, Robert F. Blacksmith
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Abstract
Information theory has been used to quantify the amount of information transferred during a lithographic process. By calculating the information, a quantity isomorphous with the entropy, we are able to determine the points in the process space where most of the lithographic information is lost and suggest modifications that will increase the overall information content. In this study we use the threshold image density model to evaluate the information content of the latent and printed images in a given set of resist features. The model includes contributions from exposure, acid diffusion, crosslinking or deblocking chemistry, dissolution selectivity and percolation effects. At each step we compute the information gain or loss relative to a given 'prior' distribution and display the results. Selected experimental examples will be shown to illustrate the point.
© (1994) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Charles R. Szmanda, Theodore H. Fedynyshyn, William E. Houck, Jonathan C. Root, and Robert F. Blacksmith "Role of process in obtaining optimum lithographic information from chemically amplified resists", Proc. SPIE 2195, Advances in Resist Technology and Processing XI, (16 May 1994); https://doi.org/10.1117/12.175344
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KEYWORDS
Diffusion

Lithography

Chemically amplified resists

Photomasks

Photoresist processing

Chemistry

Silicon

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