Paper
19 June 1995 Calculation of quantum well laser threshold currents in terms of new channels of nonradiative Auger recombination
Georgy G. Zegrya, Aleksey D. Andreev, Natalya A. Gunko, Elena V. Frolushkina
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Abstract
Threshold characteristics of quantum-well (QW) lasers have been investigated theoretically. The rates of radiative and Auger nonradiative carrier recombination processes in QW have been calculated. Auger rate dependence on the parameters of QW and the temperature has been investigated. It is shown that Auger rate is a nonmonotonic function of QW thickness a; it has a maximum at small a. Auger rate increases with the barrier height and decrease rapidly with band gap; Auger rate is a power function of temperature. It was shown that the carrier concentration on the generation threshold is a linear function of temperature. Threshold current density is shown to be a power rather than exponential function of temperature.
© (1995) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Georgy G. Zegrya, Aleksey D. Andreev, Natalya A. Gunko, and Elena V. Frolushkina "Calculation of quantum well laser threshold currents in terms of new channels of nonradiative Auger recombination", Proc. SPIE 2399, Physics and Simulation of Optoelectronic Devices III, (19 June 1995); https://doi.org/10.1117/12.212507
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Cited by 11 scholarly publications.
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KEYWORDS
Quantum wells

Laser damage threshold

Semiconductors

Quantization

Particles

Semiconductor lasers

Dielectrics

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