Lithography simulation of contamination-caused defects

Christopher E. Novak; Kevin D. Lucas; Andrzej J. Strojwas; Zhi-Min Ling

doi:10.1117/12.209202

22 May 1995 Lithography simulation of contamination-caused defects

Christopher E. Novak, Kevin D. Lucas, Andrzej J. Strojwas, Zhi-Min Ling

Proceedings Volume 2439, Integrated Circuit Metrology, Inspection, and Process Control IX; (1995) https://doi.org/10.1117/12.209202
Event: SPIE's 1995 Symposium on Microlithography, 1995, Santa Clara, CA, United States

Abstract

Lithography is the critical process for developing smaller and more dimensionally accurate semiconductor structures more reliably. Many random defects are caused by contamination particles during the lithographic process. Several models have predicted yield loss associated with defect density and particle size. Although some have taken into account the defect growth mechanisms, a more accurate simulator is needed to provide the transformation from the contamination to the defect level. In this paper, the contamination to defect transformation is investigated using the 2D lithographic simulator, METROPOLE. A study is presented that characterizes the effects of particle size, location and composition on the formation of lithographic defects for a 2D metal line structure. Particle characterization and parameterization is carried out for a number of common conditions including different light polarizations, defocus, and nonplanarities. The simulations are checked against defect data from AMD Sunnyvale.

Citation Download Citation

Christopher E. Novak, Kevin D. Lucas, Andrzej J. Strojwas, and Zhi-Min Ling "Lithography simulation of contamination-caused defects", Proc. SPIE 2439, Integrated Circuit Metrology, Inspection, and Process Control IX, (22 May 1995); https://doi.org/10.1117/12.209202

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