Atom-resolved study of laser-induced etching processes at chlorine-adsorbed Si(111) surfaces

Fumio Komori; Ken Hattori

doi:10.1117/12.221475

25 September 1995 Atom-resolved study of laser-induced etching processes at chlorine-adsorbed Si(111) surfaces

Fumio Komori, Ken Hattori

Proceedings Volume 2547, Laser Techniques for Surface Science II; (1995) https://doi.org/10.1117/12.221475
Event: SPIE's 1995 International Symposium on Optical Science, Engineering, and Instrumentation, 1995, San Diego, CA, United States

Abstract

Structural changes of chlorine-adsorbed silicon(111)-7X7 surfaces by laser light were studied with a scanning tunneling microscope, and desorption species (SiCo_x) from the surface were measured with a quadrupole mass spectrometer, avoiding strong thermal effects. For the laser stimulation with 4.7 eV in photon energy to chlorine saturated surfaces, we found that the remaining surfaces change to have a structure of the restatom order with a number of irregularities, and that SiCl₂ is primarily desorbed out. These results are ascribed to the stability of monochlorides and the instability of polychlorides for the electronic excitation by the light. We also found a drastic difference in the threshold laser fluence for the detection of desorbed SiCl₂ between the photon energy of 1.2 and that of 2.3 eV. One of the possible desorption processes is that photo-generated bulk carriers induces that bond breaking of polychlorides on the substrate.

Citation Download Citation

Fumio Komori and Ken Hattori "Atom-resolved study of laser-induced etching processes at chlorine-adsorbed Si(111) surfaces", Proc. SPIE 2547, Laser Techniques for Surface Science II, (25 September 1995); https://doi.org/10.1117/12.221475

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