Optical characterization of the structure of SIPOS layers

I. P. Lisovskii; Vladimir G. Litovchenko; V. B. Lozinskii; E. V. Mischenko; Walter Fussel

doi:10.1117/12.226160

3 November 1995 Optical characterization of the structure of SIPOS layers

I. P. Lisovskii, Vladimir G. Litovchenko, V. B. Lozinskii, E. V. Mischenko, Walter Fussel

Proceedings Volume 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics; (1995) https://doi.org/10.1117/12.226160
Event: International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, 1995, Kiev, Ukraine

Abstract

Using IR spectroscopy, Rutherford back-scattering technique and optical microscopy the structure of SIPOS films produced by CVD method is investigated. The network of oxygen- doped silicon is shown to represent a mixture of Si-O_y-Si_4-y complexes with 0 less than or equal to y less than or equal to 4 and micro-inclusions of strongly oxidized silicon. Contribution of these complexes is dependent on the processes of layer growth and post- treatments. IR spectroscopy was demonstrated to be a convenient technique for determination of oxygen concentration and structural arrangement in silicon-oxygen phase.

Citation Download Citation

I. P. Lisovskii, Vladimir G. Litovchenko, V. B. Lozinskii, E. V. Mischenko, and Walter Fussel "Optical characterization of the structure of SIPOS layers", Proc. SPIE 2648, International Conference on Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics, (3 November 1995); https://doi.org/10.1117/12.226160

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