Method of easily extracting resist development parameters for lithography simulation

Kevin D. Lucas; Vladimir V. Ivin; Vladislav Kudrya; Dmitry Yu. Larin; Tariel M. Makhviladze; Marina G. Medvedeva; A. A. Rogor; Sergey V. Verzunov; D. C. Yang

doi:10.1117/12.240987

7 June 1996 Method of easily extracting resist development parameters for lithography simulation

Kevin D. Lucas, Vladimir V. Ivin, Vladislav Kudrya, Dmitry Yu. Larin, Tariel M. Makhviladze, Marina G. Medvedeva, A. A. Rogor, Sergey V. Verzunov, D. C. Yang

Author Affiliations +

Proceedings Volume 2726, Optical Microlithography IX; (1996) https://doi.org/10.1117/12.240987
Event: SPIE's 1996 International Symposium on Microlithography, 1996, Santa Clara, CA, United States

Abstract

We present a description of a software tool and a methodology for easily creating photoresist development rate parameters in lithography simulation. The tool optimizes parameters using the Modified Simplex Method. The methodology uses the tool to provide insight into the effects of the development rate parameters and to find usable parameters quickly. The reasonings behind the methodology are discussed as well as advantages and disadvantages. Results from three different lithography simulators are shown to agree well with experimental cross-section SEM data.

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Kevin D. Lucas, Vladimir V. Ivin, Vladislav Kudrya, Dmitry Yu. Larin, Tariel M. Makhviladze, Marina G. Medvedeva, A. A. Rogor, Sergey V. Verzunov, and D. C. Yang "Method of easily extracting resist development parameters for lithography simulation", Proc. SPIE 2726, Optical Microlithography IX, (7 June 1996); https://doi.org/10.1117/12.240987

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