Paper
7 July 1997 Fast modeling of 3D planar resist images for high-NA projection lithography
Vladimir V. Ivin, Dmitry Yu. Larin, Kevin D. Lucas, Tariel M. Makhviladze, Andrew A. Rogov, Sergey V. Verzunov
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Abstract
A 3D planar pseudo-vector approach to modeling resist exposure has been implemented for optical projection lithography. The approach allows for high numeric aperture effects revealed by others in the resist latent images; comparisons made show its fine agreement with rigorous vector modeling up to NA value of 0.7. Fast Fourier transform technique has been applied to reduce mask and resist (including postbake) modeling runtime; the effects of finite accuracy approximations of the mask areas and mask periodicity have been investigated and compensated. The overall performance of the exposure model has been optimized to be 10X faster than for a similar vertical propagation model. A modified `cell' algorithm has also been used to model resist development; this resulted in more accurate resist profiles for the same latent image accuracy, providing additional runtime savings to resist profile simulations.
© (1997) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladimir V. Ivin, Dmitry Yu. Larin, Kevin D. Lucas, Tariel M. Makhviladze, Andrew A. Rogov, and Sergey V. Verzunov "Fast modeling of 3D planar resist images for high-NA projection lithography", Proc. SPIE 3051, Optical Microlithography X, (7 July 1997); https://doi.org/10.1117/12.276036
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CITATIONS
Cited by 5 scholarly publications and 1 patent.
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KEYWORDS
3D modeling

Projection lithography

3D image processing

Photomasks

Algorithm development

Performance modeling

Computer simulations

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