Paper
27 December 1996 Light diffraction and new laser technologies for maskless formation of submicron relief structures
Author Affiliations +
Proceedings Volume 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications; (1996) https://doi.org/10.1117/12.262969
Event: Ninth International School on Quantum Electronics: Lasers: Physics and Applications, 1996, Varna, Bulgaria
Abstract
The review of theoretical and experimental investigations on maskless formation of submicron periodic relief gratings on the surface of AIIIBV semiconductor materials, carried out in the Scientific Research Center for Technological Lasers of Russian Academy of Sciences is presented. The lecture is based on the materials, which were presented in the original papers. The revue of the literature can be found in the above references.
© (1996) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Vladislav Ya. Panchenko "Light diffraction and new laser technologies for maskless formation of submicron relief structures", Proc. SPIE 3052, Ninth International School on Quantum Electronics: Lasers--Physics and Applications, (27 December 1996); https://doi.org/10.1117/12.262969
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KEYWORDS
Etching

Semiconductor lasers

Semiconductors

Holography

Diffraction gratings

Diffraction

Gallium arsenide

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