Growth of GaSb single crystals with low carrier concentration

Bedrich Stepanek; Vera Sestakova; Jaroslav Sestak

doi:10.1117/12.280706

14 July 1997 Growth of GaSb single crystals with low carrier concentration

Bedrich Stepanek, Vera Sestakova, Jaroslav Sestak

Proceedings Volume 3178, Solid State Crystals: Growth and Characterization; (1997) https://doi.org/10.1117/12.280706
Event: XII Conference on Solid State Crystals: Materials Science and Applications, 1996, Zakopane, Poland

Abstract

The GaSb single crystals were grown under the flow of ionized hydrogen atmosphere using the Czochralski method without encapsulant. From the results it seems to be very likely that donors are passivated more than acceptors what was confirmed by the growth of low Te-doped GaSb. The crystals showed p-type conductivity in the whole volume and the free carriers concentration was almost homogeneous from the top to the bottom of the GaSb boule (1.8 - 2.3 multiplied by 10¹⁶ cm^-3). We suppose that an equilibrium between passivated donors and active donors has been established.

Citation Download Citation

Bedrich Stepanek, Vera Sestakova, and Jaroslav Sestak "Growth of GaSb single crystals with low carrier concentration", Proc. SPIE 3178, Solid State Crystals: Growth and Characterization, (14 July 1997); https://doi.org/10.1117/12.280706

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