Paper
13 September 2018 Properties of Cd0.90-xMnxZn0.10Te (x = 0.10, 0.20) crystals grown by Vertical Bridgman method
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Abstract
In this paper, correlation between CMZT melt state and structure properties of crystals, grown by vertical Bridgman method, was investigated. The Cd0.9-xMnxZn0.1Te crystals with various Mn composition (x = 0.1; 0.2) were grown by two-step preparation method from high purity elemental components. We have conducted series of crystal growth runs with different melt superheating degree over the alloys melting temperature. As a result, we have got the ingots with various crystalline structures and properties. It was concluded that worth crystalline structure had the bulks which were grown from the melt with lowest superheating degree. We have determined also that band gap rose (from 1.67 at x=0.1 to 1.79 eV at x=0.2) with Mn content increasing.
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V. Kopach, O. Kopach, A. Kanak, L. Shcherbak, P. Fochuk, A. E. Bolotnikov, and R. B. James "Properties of Cd0.90-xMnxZn0.10Te (x = 0.10, 0.20) crystals grown by Vertical Bridgman method", Proc. SPIE 10762, Hard X-Ray, Gamma-Ray, and Neutron Detector Physics XX, 1076212 (13 September 2018); https://doi.org/10.1117/12.2320676
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KEYWORDS
Crystals

Tellurium

Manganese

Cadmium

Zinc

Semiconducting wafers

Carbon

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