PbSnSe-on-Si: material and IR-device properties

Hans Zogg; Alexander Fach; Joachim John; Peter Mueller; Carmine Paglino; A. N. Tiwari

doi:10.1117/12.280428

26 August 1997 PbSnSe-on-Si: material and IR-device properties

Hans Zogg, Alexander Fach, Joachim John, Peter Mueller, Carmine Paglino, A. N. Tiwari

Proceedings Volume 3182, Material Science and Material Properties for Infrared Optoelectronics; (1997) https://doi.org/10.1117/12.280428
Event: Material Science and Material Properties for Infrared Optoelectronics, 1996, Uzhgorod, Ukraine

Abstract

Progress in the development of narrow gap IV-VI-on-Si technology for IR sensor arrays is reviewed. Epitaxial Pb_1-xSn_xSe layers, about 4 micrometers thick, are grown by molecular beam epitaxy onto 3 inch Si(111) substrates. An intermediate CaF₂ buffer layer of only 2 nm thickness was employed for compatibility reasons in most cases, direct growth without buffer layer, however, is possible. Material quality is improved by proper growth conditions and annealing. Threading dislocation densities as low as 10⁶ cm^-2 are obtained in samples with 3 X 3 cm² size after proper anneal. It seems that glissile threading dislocations sweep out across the edge of the samples, and, in addition, such dislocations are able to react with sessile ones and transform them to glissile. IR photodiodes with much higher resistance area products can be obtained which approach the theoretical limit in a certain temperature range with such improve material quality. If the Pb/Pb_1-xSn_xSe IR Schottky-barrier sensors are described with a model which allows fluctuations of the barrier height, the saturation of the resistance-area products at low temperatures as well as ideality factors > 1 are explained as well.

Citation Download Citation

Hans Zogg, Alexander Fach, Joachim John, Peter Mueller, Carmine Paglino, and A. N. Tiwari "PbSnSe-on-Si: material and IR-device properties", Proc. SPIE 3182, Material Science and Material Properties for Infrared Optoelectronics, (26 August 1997); https://doi.org/10.1117/12.280428

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