PbSnSe-on-Si infrared techniques: improvements in materials and devices

Hans Zogg; Alexander Fach; Joachim John; Peter Mueller; Carmine Paglino

doi:10.1117/12.255166

22 October 1996 PbSnSe-on-Si infrared techniques: improvements in materials and devices

Hans Zogg, Alexander Fach, Joachim John, Peter Mueller, Carmine Paglino

Proceedings Volume 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices; (1996) https://doi.org/10.1117/12.255166
Event: SPIE's 1996 International Symposium on Optical Science, Engineering, and Instrumentation, 1996, Denver, CO, United States

Abstract

Progress in the development of narrow gap IV-VI-on-Si technology for infrared sensor arrays is reviewed. Epitaxial Pb_1-xSn_xSe layers, about 4 micrometer thick, are grown by molecular beam epitaxy onto 3 inch Si(111) substrates, and employing an intermediate CaF₂ layer of only 2 nm thickness for compatibility reasons. Material quality is improved by proper growth conditions and annealing. Threading dislocation densities as low as 10⁶ cm^-2 are obtained in samples with 3 by 3 cm² size after proper anneal. It seems that glissile threading dislocations sweep out across the edge of the samples, and, in addition, such dislocations are able to react with sessile ones and transform them to glissile. Infrared photodiodes with much higher resistance area products can be obtained which approach the theoretical limit in a certain temperature range with such improved material quality. If the Pb/Pb_1-xSn_xSe infrared Schottky-barrier sensors are described with a model which allows fluctuations of the barrier height, the saturation of the resistance-area products at low temperatures as well as ideality factors very much greater than 1 are explained, too.

Citation Download Citation

Hans Zogg, Alexander Fach, Joachim John, Peter Mueller, and Carmine Paglino "PbSnSe-on-Si infrared techniques: improvements in materials and devices", Proc. SPIE 2816, Infrared Detectors for Remote Sensing: Physics, Materials, and Devices, (22 October 1996); https://doi.org/10.1117/12.255166

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