Measuring critical dimensions and overlays as prescribed by the National Technology Roadmap for Semiconductors

Syed A. Rizvi

doi:10.1117/12.284025

12 February 1997 Measuring critical dimensions and overlays as prescribed by the National Technology Roadmap for Semiconductors

Syed A. Rizvi

Author Affiliations +

Proceedings Volume 3236, 17th Annual BACUS Symposium on Photomask Technology and Management; (1997) https://doi.org/10.1117/12.284025
Event: 17th Annual BACUS Photomask Technology and Management, 1997, Redwood City, CA, United States

Abstract

Continued demands on shrinking features with tighter tolerance on critical dimensions (CDs) and overlays (OL) are placing stringent requirements on parameters that are essentially the building blocks of the metrologies for CDs and overlays. This paper conducts a reality check on the precision and error budgets assigned to CD and overlay controls by the National Technology Roadmap for Semiconductors (NTRS) in light of constraints on parameters that are fundamental to the above measurements.

Citation Download Citation

Syed A. Rizvi "Measuring critical dimensions and overlays as prescribed by the National Technology Roadmap for Semiconductors", Proc. SPIE 3236, 17th Annual BACUS Symposium on Photomask Technology and Management, (12 February 1997); https://doi.org/10.1117/12.284025

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available