Ultrafast hole relaxation in III-V semiconductors

Natalia Del Fatti; Pierre Langot; Raffaele Tommasi; Fabrice Vallee

doi:10.1117/12.306143

23 April 1998 Ultrafast hole relaxation in III-V semiconductors

Natalia Del Fatti, Pierre Langot, Raffaele Tommasi, Fabrice Vallee

Proceedings Volume 3277, Ultrafast Phenomena in Semiconductors II; (1998) https://doi.org/10.1117/12.306143
Event: Optoelectronics and High-Power Lasers and Applications, 1998, San Jose, CA, United States

Abstract

Ultrafast relaxation of photoexcited nonequilibrium holes is selectively investigated in bulk GaAs and InP using a high- sensitivity two-color absorption saturation technique. Measurements of the hole characteristic thermalization time as a function of the lattice temperature and of the carrier density and initial average energy show that nonequilibrium hole relaxation is dominated by hole-optical phonon interactions in the range 100 - 300 K. Comparison of the experimental results with a numerical model of carrier dynamics permits the determination of the optical deformation potential in both of these compounds.

Citation Download Citation

Natalia Del Fatti, Pierre Langot, Raffaele Tommasi, and Fabrice Vallee "Ultrafast hole relaxation in III-V semiconductors", Proc. SPIE 3277, Ultrafast Phenomena in Semiconductors II, (23 April 1998); https://doi.org/10.1117/12.306143

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