Time-domain modeling of InP/InGaAs avalanche photodiodes

Yegao Xiao; M. Jamal Deen

doi:10.1117/12.429427

12 June 2001 Time-domain modeling of InP/InGaAs avalanche photodiodes

Yegao Xiao, M. Jamal Deen

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429427
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

By using a simplified time domain modeling approach, the temperature dependent performance characteristics such as multiplication gain and bandwidth are studied for InP/InGaAs separate absorption, grading, charge and multiplication (SAGCM) APDs within the temperature range from -243 to 358 K. The modeling approach is improved to consider the effects of hole diffusion, hole trapping, load circuit RC and gain-bandwidth product limit together with the fast Fourier transformation component of the impulse response from the time domain computation. The modeling results agree with experiments. The effects of changing material parameters on modeling are also discussed. The improved performance characteristics also indicate the potential application prospects of InP/InGaAs SAGCM APDs in low temperature environments.

Citation Download Citation

Yegao Xiao and M. Jamal Deen "Time-domain modeling of InP/InGaAs avalanche photodiodes", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429427

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