Use of ion implantation for the creation of ultrafast photodetector materials and tuning of quantum well infrared photodetectors

Hark Hoe Tan; L. Fu; C. Y. Carmody; Chennupati Jagadish

doi:10.1117/12.429438

12 June 2001 Use of ion implantation for the creation of ultrafast photodetector materials and tuning of quantum well infrared photodetectors

Hark Hoe Tan, L. Fu, C. Y. Carmody, Chennupati Jagadish

Author Affiliations +

Proceedings Volume 4288, Photodetectors: Materials and Devices VI; (2001) https://doi.org/10.1117/12.429438
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

There has been a great revival of interest in the area of ultrafast photodetectors after the discovery of low temperature (LT) MBE-grown GaAs [1-3]. These detectors have found numerous applications in picosecond electrical pulse generation and sampling, and as main components of spectroscopic arrangements for terahertz frequency range. The unique properties of LT GaAs such as short carrier lifetimes and high resistivity made it a promising material for ultrafast photoconductive switches and photodetectors. It has been reported that ion implanted material may provide an alternative material for these applications [4-6]. Defects introduced by implantation may act as traps or recombination centres that have large carrier capture cross sections which shorten the carrier lifetimes significantly. The work presented below is an overview of how ion implantation could be used to modify the properties of GaAs and InP for ultrafast photodetector applications. Also, in the area of quantum well infrared photodetectors (QWIPs), there has been much effort in developing the technology for multi-color QWIPs [7,8]. These devices are highly desirable in advanced high performance infrared (IR) systems as it provides not only the spatial information of the image but also the spectral information. Although the functionality of these devices could be designed right from the epitaxy stage, it requires complicated structures and processing steps. In this paper we will demonstrated an alternative method of realizing the multi-color QWIP by a technique known as intermixing. By implantation, the band structure of the quantum wells (QWs) could be modified and hence tune the detection wavelength of the device.

Citation Download Citation

Hark Hoe Tan, L. Fu, C. Y. Carmody, and Chennupati Jagadish "Use of ion implantation for the creation of ultrafast photodetector materials and tuning of quantum well infrared photodetectors", Proc. SPIE 4288, Photodetectors: Materials and Devices VI, (12 June 2001); https://doi.org/10.1117/12.429438

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available

Members: $17.00

Non-members: $21.00 ADD TO CART

PROCEEDINGS
9 PAGES

DOWNLOAD PAPER SAVE TO MY LIBRARY

GET CITATION

RIGHTS & PERMISSIONS

Get copyright permission Get copyright permission on Copyright Marketplace

KEYWORDS

Annealing

Gallium arsenide

Quantum well infrared photodetectors

Photodetectors

Quantum wells

Ultrafast phenomena

Ions

Show All Keywords

Keywords/Phrases

Search In:

Publication Years