Increased electroluminescence from a two-junction Si n+pn CMOS structure

Jerry M. Matjila; Lukas Willem Snyman

doi:10.1117/12.426933

18 May 2001 Increased electroluminescence from a two-junction Si n⁺pn CMOS structure

Jerry M. Matjila, Lukas Willem Snyman

Proceedings Volume 4293, Silicon-based and Hybrid Optoelectronics III; (2001) https://doi.org/10.1117/12.426933
Event: Symposium on Integrated Optics, 2001, San Jose, CA, United States

Abstract

We have recently observed an increase in the visible electroluminescence from a two-junction Si n⁺pn CMOS structure. The device emit visible light in the 450 - 750 nm wavelength region at intensities up to 1 nWmicrometers ^-2 and operate at 8 - 20V and 50 (mu) A - 10mA. The device utilizes the injection of electrons from a slightly forward biased and adjacently positioned pn junction into a second hot-carrier avalanching reverse-biased junction. The observed observation is explained in terms of a physical model that propose that direct interband recombination of low energy (cool) electrons recombine or interact with high energy (hot) carrier valance band holes in the silicon indirect bandgap structure. Although the emission is subsurface at this stage, the luminescence intensity appears to be about 250 times brighter than the luminescent intensity resulting from surface emitting Si pn avalanching junctions. The experimental observations and model predicts that the electrical-to-optical power conversion and quantum efficiencies as associated with present Si CMOS LED's may be increased by several orders of magnitude. The present levels of this Si LED is about three to four orders higher than the low frequency detectability of standard pn silicon detector utilizing the same area on chip.

Citation Download Citation

Jerry M. Matjila and Lukas Willem Snyman "Increased electroluminescence from a two-junction Si n⁺pn CMOS structure", Proc. SPIE 4293, Silicon-based and Hybrid Optoelectronics III, (18 May 2001); https://doi.org/10.1117/12.426933

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available