Studies Of High Speed Photodetectors In III-V Compounds

A. von Lehmen; S. Wojtczuk; D. K. Wagner; J. M. Ballantyne

doi:10.1117/12.966094

28 November 1983 Studies Of High Speed Photodetectors In III-V Compounds

A. von Lehmen, S. Wojtczuk, D. K. Wagner, J. M. Ballantyne

Proceedings Volume 0439, Picosecond Optoelectronics; (1983) https://doi.org/10.1117/12.966094
Event: 27th Annual Technical Symposium, 1983, San Diego, United States

Abstract

Optical techniques for time resolved studies of semiconductors are attractive because they are inherently limited only by the excitation laser pulsewidth. In recent years, various techniques have been exploited in measurements of photoexcited carrier dynamics and fast relaxation processes in GaAs and other semiconductors. Each optical technique has its own set of disadvantages. An absorption experiment requires a transparent sample or device. Because of the small signal, reflectivity experiments in the visible require good noise rejection. Time resolved luminescence measurements utilizing upconversion techniques have been difficult due to low upconversion efficiencies. However, the existence of a non-linearity in the luminescence of GaAs''' has made luminescent measurements easy, even at room temperature.

Citation Download Citation

A. von Lehmen, S. Wojtczuk, D. K. Wagner, and J. M. Ballantyne "Studies Of High Speed Photodetectors In III-V Compounds", Proc. SPIE 0439, Picosecond Optoelectronics, (28 November 1983); https://doi.org/10.1117/12.966094

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