Fast carrier dynamics in novel GaAs deep-centers for high-efficiency light-emitters for 1.3um-1.5um fiber optics

Janet L. Pan

doi:10.1117/12.721464

8 February 2007 Fast carrier dynamics in novel GaAs deep-centers for high-efficiency light-emitters for 1.3um-1.5um fiber optics

Janet L. Pan

Author Affiliations +

Proceedings Volume 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV; 64710D (2007) https://doi.org/10.1117/12.721464
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

We demonstrate the first LEDs at 1.3-1.5um using GaAs deep-centers having higher (90%) efficiencies and larger Einstein B-coefficients than bulk InGaAs. An observed absence of deep-center self-absorption (from a Franck-Condon shift) could make possible near-zero threshold lasers. The fast capture (15- 40fs) of free holes by deep-centers, as well as the Einstein B-coefficient, are deduced from a combination of photoluminescence and electroluminescence measurements.

Citation Download Citation

Janet L. Pan "Fast carrier dynamics in novel GaAs deep-centers for high-efficiency light-emitters for 1.3um-1.5um fiber optics", Proc. SPIE 6471, Ultrafast Phenomena in Semiconductors and Nanostructure Materials XI and Semiconductor Photodetectors IV, 64710D (8 February 2007); https://doi.org/10.1117/12.721464

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