Nonadiabatic transient behavior of quantum well photodetectors

David A. Cardimona; Danhong Huang; Christian P. Morath; Hillary E. Norton

doi:10.1117/12.448164

12 November 2001 Nonadiabatic transient behavior of quantum well photodetectors

David A. Cardimona, Danhong Huang, Christian P. Morath, Hillary E. Norton

Proceedings Volume 4454, Materials for Infrared Detectors; (2001) https://doi.org/10.1117/12.448164
Event: International Symposium on Optical Science and Technology, 2001, San Diego, CA, United States

Abstract

In the presence of a time-dependent external source such as a bias electric field, an incident optical flux, or the temperature, electrons in quantum well devices experience non-adiabatic transport through the barrier layer between two adjacent quantum wells. This non-adiabatic transport process induces charge density fluctuations within each quantum well, resulting in several seemingly unrelated transient phenomena. When a time-dependent electric field is applied to the system, a dynamical breakdown and a zero-bias residual dark current in the quantum-well photodetectors are predicted theoretically. If a chopped time-dependent optical flux is incident on the system, a dynamical drop in the photo-responsivity with increasing chopping frequency and an emission-current spike as the optical shutter is opened are predicted. Finally, as the device temperature is varied with time, a counter-clockwise thermal hysteresis is found theoretically in the dark current curve as a function of the changing temperature. Experimental confirmation of the above theoretical predictions is presented.

Citation Download Citation

David A. Cardimona, Danhong Huang, Christian P. Morath, and Hillary E. Norton "Nonadiabatic transient behavior of quantum well photodetectors", Proc. SPIE 4454, Materials for Infrared Detectors, (12 November 2001); https://doi.org/10.1117/12.448164

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KEYWORDS

Quantum wells

Circuit switching

Quantum well infrared photodetectors

Electrons

Dielectrics

Resistance

Capacitance

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