Transient effects in InAs/GaAs quantum-dot detectors under low-temperature and low-background conditions

Hillary E. Norton; David A. Cardimona; Christian P. Morath; Dang T. Le; Dan Hong Huang; Sanjay Krishna; Sunil Raghavan; P. Rotella

doi:10.1117/12.453513

11 November 2002 Transient effects in InAs/GaAs quantum-dot detectors under low-temperature and low-background conditions

Hillary E. Norton, David A. Cardimona, Christian P. Morath, Dang T. Le, Dan Hong Huang, Sanjay Krishna, Sunil Raghavan, P. Rotella

Author Affiliations +

Proceedings Volume 4823, Photonics for Space Environments VIII; (2002) https://doi.org/10.1117/12.453513
Event: International Symposium on Optical Science and Technology, 2002, Seattle, WA, United States

Abstract

In the presence of a time-dependent external source such as a bias electric field or an incident optical flux, electrons in quantum well and quantum dot devices experience non-adiabatic transport through the barrier layer between two adjacent quantum wells or quantum dots. This non-adiabatic transport process induces charge density fluctuations, resulting in several transient phenomena. When a time-dependent electric field is applied to the system, a dynamical breakdown (i.e., the dark current is dominated by a dielectric displacement current) of the quantum well or quantum dot photodetector is observed. If a chopped time-dependent optical flux is incident on either system, a dynamical drop in the photo-responsivity with increasing chopping frequency is also observed.

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Hillary E. Norton, David A. Cardimona, Christian P. Morath, Dang T. Le, Dan Hong Huang, Sanjay Krishna, Sunil Raghavan, and P. Rotella "Transient effects in InAs/GaAs quantum-dot detectors under low-temperature and low-background conditions", Proc. SPIE 4823, Photonics for Space Environments VIII, (11 November 2002); https://doi.org/10.1117/12.453513

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