Paper
1 April 2002 Enhanced semiconductor photorefractivity in the presence of a magnetic field
Praveen Aghamkar, Sunayana Nepal, Suta Suta
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Abstract
Using single-defect single band mode, a large value of the exponential gain coefficient is obtained by degenerate two- picosecond light pulses in a photorefractive GaAs:EL2 crystal in the presence of an applied magneto-static field. The influences of a cd magnetic field on the temporal recording and erasure of the grating are analytically analyzed. A significant enhancement of the diffraction efficiency of the recorded hologram by a factor of 2 is obtained. The results are good qualitatively in agreement with the experimental observations.
© (2002) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Praveen Aghamkar, Sunayana Nepal, and Suta Suta "Enhanced semiconductor photorefractivity in the presence of a magnetic field", Proc. SPIE 4750, ICONO 2001: Quantum and Atomic Optics, High-Precision Measurements in Optics, and Optical Information Processing, Transmission, and Storage, (1 April 2002); https://doi.org/10.1117/12.464482
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KEYWORDS
Crystals

Electrons

Semiconductors

Magnetism

Diffraction

Diffusion

Magnetic semiconductors

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