Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making

Mathias Irmscher; Lothar Berger; Dirk Beyer; Joerg Butschke; Peter Dress; Thomas Hoffmann; Peter Hudek; Corinna Koepernik; Martin Tschinkl; Peter Voehringer

doi:10.1117/12.504185

28 August 2003 Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making

Mathias Irmscher, Lothar Berger, Dirk Beyer, Joerg Butschke, Peter Dress, Thomas Hoffmann, Peter Hudek, Corinna Koepernik, Martin Tschinkl, Peter Voehringer

Author Affiliations +

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504185
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

Negative-tone chemically amplified resists MES-EN1G (JSR), FEN-270 (Fujifilm ARCH), EN-024M (TOK) and NEB-22 (Sumitomo) were evaluated for binary mask making. The investigations were performed on an advanced tool set comprising a 50kV e-beam writer Leica SB350, a Steag Hamatech hot/cool plate module APB5000, a Steag Hamatech developer ASP5000, an UNAXIS MASK ETCHER III and a SEM LEO1560 with integrated CD measurement option. We investigated and compared the evaluated resists in terms of resolution, e-beam sensitivity, resist profile, post exposure bake sensitivity, CD-uniformity, line edge roughness, pattern fidelity and etch resistance. Furthermore, the influence of post coating delay and post exposure delay in vacuum and air was determined.

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Mathias Irmscher, Lothar Berger, Dirk Beyer, Joerg Butschke, Peter Dress, Thomas Hoffmann, Peter Hudek, Corinna Koepernik, Martin Tschinkl, and Peter Voehringer "Investigation of e-beam sensitive negative-tone chemically amplified resists for binary mask making", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504185

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