90-nm mask making processes using the positive tone chemically amplified resist FEP171

Joerg Butschke; Dirk Beyer; Chris Constantine; Peter Dress; Peter Hudek; Mathias Irmscher; Corinna Koepernik; Christian Krauss; Jason Plumhoff; Peter Voehringer

doi:10.1117/12.518043

17 December 2003 90-nm mask making processes using the positive tone chemically amplified resist FEP171

Joerg Butschke, Dirk Beyer, Chris Constantine, Peter Dress, Peter Hudek, Mathias Irmscher, Corinna Koepernik, Christian Krauss, Jason Plumhoff, Peter Voehringer

Author Affiliations +

Proceedings Volume 5256, 23rd Annual BACUS Symposium on Photomask Technology; (2003) https://doi.org/10.1117/12.518043
Event: Photomask Technology, 2003, Monterey, California, United States

Abstract

A mask patterning technology for the 90nm technology node has been developed using the FujifilmARCH resist FEP171 and the state-of-the-art mask making tools SteagHamaTech mask coater ASR5000, Leica 50kV variable shaped e-beam writer SB350, SteagHamaTech developer ASR5000 and UNAXIS Mask Etcher III. A resist resolution of below 100nm dense lines and 150nm contact holes was demonstrated. The line width shrinking due to chrome etching varies between 25nm and 50nm per feature and a corresponding resolution of 125nm dense lines in a 105nm thick chrome absorber has been achieved. The global CD-uniformity with a 3σ of 7.7nm and a total range of 10.8nm met the requirements of the ITRS roadmap. The local uniformity with a 3σ of 3.8nm and a range of 5.6nm offers potential for future application of the Leica SB350. Applying of a new correction method taking electron scattering and process characeristics into account provides a linearity of 6.1nm. In addition, the line width of different featurees was kept in a range up to 12nm when the local pattern density was changed. The composite placement accuracy of 12nm fulfills already the requirements of the 65nm node. A special investigation proved the excellent fogging depression of the SB350.

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Joerg Butschke, Dirk Beyer, Chris Constantine, Peter Dress, Peter Hudek, Mathias Irmscher, Corinna Koepernik, Christian Krauss, Jason Plumhoff, and Peter Voehringer "90-nm mask making processes using the positive tone chemically amplified resist FEP171", Proc. SPIE 5256, 23rd Annual BACUS Symposium on Photomask Technology, (17 December 2003); https://doi.org/10.1117/12.518043

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