Recent lithographic results from LEEPL

Shigeru Moriya

doi:10.1117/12.504066

28 August 2003 Recent lithographic results from LEEPL

Shigeru Moriya

Proceedings Volume 5130, Photomask and Next-Generation Lithography Mask Technology X; (2003) https://doi.org/10.1117/12.504066
Event: Photomask and Next Generation Lithography Mask Technology X, 2003, Yokohama, Japan

Abstract

LEEPL is a new electron beam exposure technology proposed in 1999. But, fundamental technologies used for LEEPL had been proposed and proved over the past one or two decades. By using existing technologies effectively, LEEPL can be developed in a short period. Fortunately, contact holes less than 100nm are required for 65nm-node lithography. We have the specific target for early implementation of the device fabrication. This paper describes the imaging capability, the image placement accuracy and the process application.

Citation Download Citation

Shigeru Moriya "Recent lithographic results from LEEPL", Proc. SPIE 5130, Photomask and Next-Generation Lithography Mask Technology X, (28 August 2003); https://doi.org/10.1117/12.504066

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