Enhancement of optical properties of self-assembled quantum dots for infrared photodetectors by thermal annealing

Sung Ho Hwang; Jae Cheol Shin; Jin Dong Song; Won Jun Choi; Yong Ju Park; Il Ki Han; Woon Jo Cho; Jung Il Lee; Haewook Han

doi:10.1117/12.506623

8 December 2003 Enhancement of optical properties of self-assembled quantum dots for infrared photodetectors by thermal annealing

Sung Ho Hwang, Jae Cheol Shin, Jin Dong Song, Won Jun Choi, Yong Ju Park, Il Ki Han, Woon Jo Cho, Jung Il Lee, Haewook Han

Author Affiliations +

Proceedings Volume 5209, Materials for Infrared Detectors III; (2003) https://doi.org/10.1117/12.506623
Event: Optical Science and Technology, SPIE's 48th Annual Meeting, 2003, San Diego, California, United States

Abstract

Intermixing effects of MOCVD (metal organic chemical vapor deposition) grown InGaAs SAQDs (self-assembled quantum dots) covered with SiO₂ and SiN_x-SiO₂ dielectric capping layers were investigated. The intermixing of SAQDs was isothermally performed at 700°C by varying annealing time under the N₂-gas ambient. It was confirmed from the PL measurement after the thermal annealing that, the emission energy of SAQDs was blue-shifted by 190 meV, the FWHM (full width at half maximum) was narrowed from 76 meV to 47 meV and the PL intensity was increased. SiNx-SiO₂ double capping layer have been found to induce larger PL intensity after the thermal annealing of SAQDs compared to SiO₂ single capping layer. The results can be implemented for increasing quantum efficiency and tuning the detection wavelength in quantum dot infrared photodetector (QDIP).

Citation Download Citation

Sung Ho Hwang, Jae Cheol Shin, Jin Dong Song, Won Jun Choi, Yong Ju Park, Il Ki Han, Woon Jo Cho, Jung Il Lee, and Haewook Han "Enhancement of optical properties of self-assembled quantum dots for infrared photodetectors by thermal annealing", Proc. SPIE 5209, Materials for Infrared Detectors III, (8 December 2003); https://doi.org/10.1117/12.506623

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