Positron annihilation and optical spectroscopy of silicon-related materials

D. Pliszka; G. P. Karwasz; Jozef Heldt; R. S. Brusa

doi:10.1117/12.544571

17 November 2003 Positron annihilation and optical spectroscopy of silicon-related materials

D. Pliszka, G. P. Karwasz, Jozef Heldt, R. S. Brusa

Proceedings Volume 5258, IV Workshop on Atomic and Molecular Physics; (2003) https://doi.org/10.1117/12.544571
Event: IV Workshop on Atomic and Molecular Physics, 2002, Jurata, Poland

Abstract

Optical (VIS photoluminescence, photoluminescence decay, IR absorption) measurements on Czochralski-grown silicon, subjected to several thermal treatments are presented. These data are supplemented by positron annihiliation techniques (lifetime Doppler broadening). We report also some preliminary positron-annihilation data on these films of Si-related, low-ε materials.

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D. Pliszka, G. P. Karwasz, Jozef Heldt, and R. S. Brusa "Positron annihilation and optical spectroscopy of silicon-related materials", Proc. SPIE 5258, IV Workshop on Atomic and Molecular Physics, (17 November 2003); https://doi.org/10.1117/12.544571

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