A simple and accurate resist parameter extraction method for sub-80-nm DRAM patterns

Sook Lee; Chan Hwang; Dong-Woon Park; In-Sung Kim; Ho-Chul Kim; Sang-Gyun Woo; Han-Ku Cho; Joo-Tae Moon

doi:10.1117/12.536280

28 May 2004 A simple and accurate resist parameter extraction method for sub-80-nm DRAM patterns

Sook Lee, Chan Hwang, Dong-Woon Park, In-Sung Kim, Ho-Chul Kim, Sang-Gyun Woo, Han-Ku Cho, Joo-Tae Moon

Proceedings Volume 5377, Optical Microlithography XVII; (2004) https://doi.org/10.1117/12.536280
Event: Microlithography 2004, 2004, Santa Clara, California, United States

Abstract

Due to the polarization effect of high NA lithography, the consideration of resist effect in lithography simulation becomes increasingly important. In spite of the importance of resist simulation, many process engineers are reluctant to consider resist effect in lithography simulation due to time-consuming procedure to extract required resist parameters and the uncertainty of measurement of some parameters. Weiss suggested simplified development model, and this model does not require the complex kinetic parameters. For the device fabrication engineers, there is a simple and accurate parameter extraction and optimizing method using Weiss model. This method needs refractive index, Dill’s parameters and development rate monitoring (DRM) data in parameter extraction. The parameters extracted using referred sequence is not accurate, so that we have to optimize the parameters to fit the critical dimension scanning electron microscopy (CD SEM) data of line and space patterns. Hence, the FiRM of Sigma-C is utilized as a resist parameter-optimizing program. According to our study, the illumination shape, the aberration and the pupil mesh point have a large effect on the accuracy of resist parameter in optimization. To obtain the optimum parameters, we need to find the saturated mesh points in terms of normalized intensity log slope (NILS) prior to an optimization. The simulation results using the optimized parameters by this method shows good agreement with experiments for iso-dense bias, Focus-Exposure Matrix data and sub 80nm device pattern simulation.

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Sook Lee, Chan Hwang, Dong-Woon Park, In-Sung Kim, Ho-Chul Kim, Sang-Gyun Woo, Han-Ku Cho, and Joo-Tae Moon "A simple and accurate resist parameter extraction method for sub-80-nm DRAM patterns", Proc. SPIE 5377, Optical Microlithography XVII, (28 May 2004); https://doi.org/10.1117/12.536280

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KEYWORDS

Calibration

Lithography

Data conversion

Scanning electron microscopy

Device simulation

Diffusion

Refractive index

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