In-line implant and RTP process monitoring using the carrier illumination technique for 65 nm and beyond

C. I. Li; H. L. Chuang; P. Y. Chen; C. H. Liu; C. C. Chien; K. T. Huang; S. F. Tzou

doi:10.1117/12.646050

15 February 2006 In-line implant and RTP process monitoring using the carrier illumination technique for 65 nm and beyond

C. I. Li, H. L. Chuang, P. Y. Chen, C. H. Liu, C. C. Chien, K. T. Huang, S. F. Tzou

Author Affiliations +

Proceedings Volume 6104, High-Power Diode Laser Technology and Applications IV; 61040T (2006) https://doi.org/10.1117/12.646050
Event: Lasers and Applications in Science and Engineering, 2006, San Jose, California, United States

Abstract

This paper describes the application of the Carrier Illumination technique to non-destructively measure dopant behavior before and after annealing for 65nm technology. Patterned wafers were implanted with different SDE energy and dosages. The detected signals from laser diode show good correlation with electrical performance (drive current, overlap capacitance). Another crucial application is to in-line monitor the thermal process. By splitting spike anneal temperature, we found detected signals were proportional to the junction depth of SIMS. The non-destructive, non-contact, and small spot size nature of the CI measurement method is capable of tracing low energy implant and spike anneal.

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C. I. Li, H. L. Chuang, P. Y. Chen, C. H. Liu, C. C. Chien, K. T. Huang, and S. F. Tzou "In-line implant and RTP process monitoring using the carrier illumination technique for 65 nm and beyond", Proc. SPIE 6104, High-Power Diode Laser Technology and Applications IV, 61040T (15 February 2006); https://doi.org/10.1117/12.646050

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