High aspect ratio plasma etching of bulk lead zirconate titanate

Srimath S. Subasinghe; Abhijat Goyal; Srinivas A. Tadigadapa

doi:10.1117/12.657751

23 January 2006 High aspect ratio plasma etching of bulk lead zirconate titanate

Srimath S. Subasinghe, Abhijat Goyal, Srinivas A. Tadigadapa

Proceedings Volume 6109, Micromachining and Microfabrication Process Technology XI; 61090D (2006) https://doi.org/10.1117/12.657751
Event: MOEMS-MEMS 2006 Micro and Nanofabrication, 2006, San Jose, California, United States

Abstract

Lead Zirconate Titanate (PZT) is a high energy density active material with good piezoelectric coefficient and electromechanical coupling constant making it highly suitable for microsystems applications. In this paper, we present a rapid anisotropic high aspect ratio etching process for defining micron size features in PZT. We used an inductively coupled plasma reactive ion etching (ICP-RIE) system employing sulfur hexafluoride (SF6) and argon (Ar) based chemistry. A seed layer of Au/Cr was lithographically patterned onto fine lap finished PZT-4 substrates followed by electrodeposition of a thick 2-5 μm nickel on the seed layer, which acts as a hard mask during the etching process. The demonstrated technique was used to etch bulk PZT ceramic substrates, thereby opening possibilities for integration of bulk PZT substrates and structures into microsystems. A maximum etch rate of 19 μm/hr on PZT-4 and 25 μm/hr for PZT-5A compositions was obtained using 2000 W of ICP power, 475 W of substrate power, 5 sccm of SF₆, and 50 sccm of Ar on PZT substrate. We have also demonstrated a high aspect ratio etch (>5:1) on a 3 μm feature size. Detailed analysis of the effects of ICP power, substrate power, and the etch gas composition on the etch rate of PZT are also presented in this article.

Citation Download Citation

Srimath S. Subasinghe, Abhijat Goyal, and Srinivas A. Tadigadapa "High aspect ratio plasma etching of bulk lead zirconate titanate", Proc. SPIE 6109, Micromachining and Microfabrication Process Technology XI, 61090D (23 January 2006); https://doi.org/10.1117/12.657751

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