Differential luminescence thermometry in semiconductor laser cooling

Babak Imangholi; Michael P. Hasselbeck; Daniel A. Bender; Chengao Wang; Mansoor Sheik-Bahae; Richard I. Epstein; Sarah Kurtz

doi:10.1117/12.646346

28 February 2006 Differential luminescence thermometry in semiconductor laser cooling

Babak Imangholi, Michael P. Hasselbeck, Daniel A. Bender, Chengao Wang, Mansoor Sheik-Bahae, Richard I. Epstein, Sarah Kurtz

Author Affiliations +

Proceedings Volume 6115, Physics and Simulation of Optoelectronic Devices XIV; 61151C (2006) https://doi.org/10.1117/12.646346
Event: Integrated Optoelectronic Devices 2006, 2006, San Jose, California, United States

Abstract

We demonstrate a non-contact, spectroscopic technique to measure the temperature change of semiconductors with very high precision. A temperature resolution of less than 100 μK has been obtained with bulk GaAs. This scheme finds application in experiments to study laser cooling of solids. We measure a record external quantum efficiency of 99% for a GaAs device.

Citation Download Citation

Babak Imangholi, Michael P. Hasselbeck, Daniel A. Bender, Chengao Wang, Mansoor Sheik-Bahae, Richard I. Epstein, and Sarah Kurtz "Differential luminescence thermometry in semiconductor laser cooling", Proc. SPIE 6115, Physics and Simulation of Optoelectronic Devices XIV, 61151C (28 February 2006); https://doi.org/10.1117/12.646346

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