Paper
29 March 2006 Evaluation of 193nm immersion resist without topcoat
Yayi Wei, N. Stepanenko, A. Laessig, L. Voelkel, M. Sebald
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Abstract
193nm immersion resist without topcoat is production preferred solution. The challenge of 193nm immersion resist is both low leaching level and high performance. This paper summarizes the screening results of selected 193nm immersion resists which are designed for use without top coatings. Our evaluation is divided into several phases. Leaching levels of resist samples were first tested. The leaching data were analyzed and compared to our specifications. Both binary image mask and alternating phase-shift mask exposures were done to evaluate the process window, line-edge roughness, and resist pattern profile. Resist films were rinsed by DI water prior to or after exposure, and contrast curves were measured to investigate the resist sensitivity change. The results are compared with resist systems which use developer-soluble topcoats.
© (2006) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Yayi Wei, N. Stepanenko, A. Laessig, L. Voelkel, and M. Sebald "Evaluation of 193nm immersion resist without topcoat", Proc. SPIE 6153, Advances in Resist Technology and Processing XXIII, 615305 (29 March 2006); https://doi.org/10.1117/12.655664
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Cited by 5 scholarly publications.
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KEYWORDS
Semiconducting wafers

Photoresist processing

Photomasks

Binary data

Contamination

Line edge roughness

Scanners

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