Thermal considerations in high power semiconductor lasers and semiconductor optical amplifiers

Simarjeet Singh Saini; Si Hyung Cho; Mario Dagenais

doi:10.1117/12.714295

9 February 2007 Thermal considerations in high power semiconductor lasers and semiconductor optical amplifiers

Simarjeet Singh Saini, Si Hyung Cho, Mario Dagenais

Proceedings Volume 6478, Photonics Packaging, Integration, and Interconnects VII; 647805 (2007) https://doi.org/10.1117/12.714295
Event: Integrated Optoelectronic Devices 2007, 2007, San Jose, California, United States

Abstract

In this paper we describe empirical models for predicting the performance of high power lasers, semiconductor optical amplifiers, and superluminescent diodes. The utility of the models is verified by comparing predicted results to actual performance of devices. Based on the model, three important parameters are identified for improving the performance of high power devices. These parameters include reducing the thermal resistance, reducing the series resistance, and reducing the vertical carrier leakage. A method is described to measure the thermal resistance. We further describe experiments done to reduce the series resistance of devices to achieve a value of less than 0.5 &OHgr; for a 1 mm long ridge device. Finally the effect of carrier stopper layers is described to reduce vertical leakage of carriers.

Citation Download Citation

Simarjeet Singh Saini, Si Hyung Cho, and Mario Dagenais "Thermal considerations in high power semiconductor lasers and semiconductor optical amplifiers", Proc. SPIE 6478, Photonics Packaging, Integration, and Interconnects VII, 647805 (9 February 2007); https://doi.org/10.1117/12.714295

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