Paper
4 January 2008 Analysis on the frequency band of ultra-wide-band electromagnetic radiation from photoconductive semiconductor switches
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Abstract
The experiments of ultra-wide-band electromagnetic radiation from Photoconductive Semiconductor Switches (PCSS's) triggered by high repeating frequency YAG ps laser pulse are reported. Based on the experimental results of GaAs PCSS's and InP PCSS's in the linear mode, it is indicated that the rise time of ultra-fast electric pulse generated by PCSS's depends on the rise time and the width of the triggering laser pulse. The fall time of the electric pulse is mainly effected by the lifetime of the carriers. By analyzing the relationship between the time-domain characteristic and the frequency-domain characteristic of the ultra-fast electric pulse generated by PCSS's, it is found that the frequency band of electromagnetic radiation is mainly determined by the rise time and the fall time of the ultra-fast electric pulse. The high-frequency component of frequency spectrum of electromagnetic radiation is determined by the rise time of electric pulse, and the low-frequency component is determined by the fall time. The ultra-fast electric pulse whose rise time is less than 100ps is obtained from GaAs PCSS's, and the ultra-fast electric pulse whose rise time is about 200ps is obtained from InP PCSS's.
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Wei Shi, Linqing Zhang, Xinmei Wang, and Zheng Liu "Analysis on the frequency band of ultra-wide-band electromagnetic radiation from photoconductive semiconductor switches", Proc. SPIE 6840, Terahertz Photonics, 684014 (4 January 2008); https://doi.org/10.1117/12.756474
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KEYWORDS
Gallium arsenide

Electromagnetic radiation

Electromagnetism

Switches

Ultrafast phenomena

Semiconductors

Pulsed laser operation

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