Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO2 / polystyrene microlens arrays

Yik-Khoon Ee; Pisist Kumnorkaew; Hua Tong; Ronald A. Arif; James F. Gilchrist; Nelson Tansu

doi:10.1117/12.763973

13 February 2008 Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO₂/polystyrene microlens arrays

Yik-Khoon Ee, Pisist Kumnorkaew, Hua Tong, Ronald A. Arif, James F. Gilchrist, Nelson Tansu

Author Affiliations +

Proceedings Volume 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII; 69100M (2008) https://doi.org/10.1117/12.763973
Event: Integrated Optoelectronic Devices 2008, 2008, San Jose, California, United States

Abstract

We demonstrated and analyzed 480-nm emitting III-Nitride LEDs using SiO₂/polystyrene (PS) microlens arrays, deposited via rapid-convective-deposition. Output power of MOCVD-grown InGaN QW LEDs with SiO₂/PS microlens exhibited improvement of 219%. Numerical simulation of the light extraction efficiency optimization of III-Nitride LEDs with SiO₂/PS microlens was carried out using Monte Carlo ray tracing including 3D self-consistent photon-carrier interaction. The light extraction efficiency of the LEDs with microlens array is optimized for the PS layer thickness and the SiO₂ microspheres diameter. The simulations show good agreement with experiments, indicating the use of SiO₂/PS microlens leads to increased photon escape cone.

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Yik-Khoon Ee, Pisist Kumnorkaew, Hua Tong, Ronald A. Arif, James F. Gilchrist, and Nelson Tansu "Comparison of numerical modeling and experiments of InGaN quantum wells light-emitting diodes with SiO₂/polystyrene microlens arrays", Proc. SPIE 6910, Light-Emitting Diodes: Research, Manufacturing, and Applications XII, 69100M (13 February 2008); https://doi.org/10.1117/12.763973

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