Analysis for the characteristics of a voltage tunable functional quantum structure optoelectronic integrated device

E. Darabi; V. Ahmadi; K. Mirabbaszadeh

doi:10.1117/12.793424

5 March 2008 Analysis for the characteristics of a voltage tunable functional quantum structure optoelectronic integrated device

E. Darabi, V. Ahmadi, K. Mirabbaszadeh

Author Affiliations +

Proceedings Volume 7009, Second International Conference on Advanced Optoelectronics and Lasers; 700911 (2008) https://doi.org/10.1117/12.793424
Event: Second International Conference on Advanced Optoelectronics and Lasers, 2005, Yalta, Ukraine

Abstract

A physical model for the analysis of dynamic response of a voltage- tunable optoelectronic integrated device is outlined. The device is composed of an integrated quantum well Heterojunction Phototransistor (HPT) over a strained quantum well Laser Diode. The quantum well structure Hamiltonian is numerically solved by transfer matrix method to obtain the electron and hole subband energy levels taking in to account the valence band mixing effect and strain. In order to calculate the electroabsorption coefficient, the exciton equation is solved numerically in momentum space using the Gaussian quadrature method assuming parabolic band structure. Based on the model the device has two operation modes: amplification for small optical feedback coefficient and switching for higher values.

Citation Download Citation

E. Darabi, V. Ahmadi, and K. Mirabbaszadeh "Analysis for the characteristics of a voltage tunable functional quantum structure optoelectronic integrated device", Proc. SPIE 7009, Second International Conference on Advanced Optoelectronics and Lasers, 700911 (5 March 2008); https://doi.org/10.1117/12.793424

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