Practical requirement for reflectivity control in sub 30nm device using high NA immersion lithography

Yun-kyeong Jang; So-ra Han; Hyoung-hee kim; Jin-Young Yoon; Shi-yong Lee; Kwang-sub Yoon; Seok-hwan Oh; Seong-Woon Choi; Woo-Sung Han

doi:10.1117/12.804671

4 December 2008 Practical requirement for reflectivity control in sub 30nm device using high NA immersion lithography

Yun-kyeong Jang, So-ra Han, Hyoung-hee kim, Jin-Young Yoon, Shi-yong Lee, Kwang-sub Yoon, Seok-hwan Oh, Seong-Woon Choi, Woo-Sung Han

Author Affiliations +

Proceedings Volume 7140, Lithography Asia 2008; 714032 (2008) https://doi.org/10.1117/12.804671
Event: SPIE Lithography Asia - Taiwan, 2008, Taipei, Taiwan

Abstract

Reflectivity comparison study of bottom anti reflectivity coating (BARC) was investigated at 30nm node devices with same gate width at different pitch sizes. The goal of this study is to elucidate the practical target of reflectivity for high NA immersion lithography especially focusing on the changes in the CD variation. Using double patterning technology (DPT) and single patterning technology (SPT) patterns in high NA systems, we studied the impact of reflectivity to the lithography performance for various ARC thicknesses. A strong dependence of n, k values (of BARC and substrate) on reflectivity was confirmed by simulation. Standing wave effects were investigated by vertical profiles inspection and changes in lithographic performances. Finally, we investigated the critical dimension uniformity (CDU), and line width roughness (LWR) variations for various reflectivities using hard mask substrates. Our experimental and simulation results clearly show that a 0.1% reflectivity target is highly recommendable for the sub-30 nm device process using high NA immersion lithography.

Citation Download Citation

Yun-kyeong Jang, So-ra Han, Hyoung-hee kim, Jin-Young Yoon, Shi-yong Lee, Kwang-sub Yoon, Seok-hwan Oh, Seong-Woon Choi, and Woo-Sung Han "Practical requirement for reflectivity control in sub 30nm device using high NA immersion lithography", Proc. SPIE 7140, Lithography Asia 2008, 714032 (4 December 2008); https://doi.org/10.1117/12.804671

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available