Paper
8 February 2012 High-power single emitters and laser bars with improved performance developed at JENOPTIK
M. Zorn, R. Hülsewede, O. Hirsekorn, J. Sebastian, P. Hennig
Author Affiliations +
Abstract
High-power single emitters and laser bars have proven as widely-used light sources in many industrial and medical applications or as pump source for solid state or fiber lasers. A steady increase in optical and cost efficiency is needed to find the way into new markets. Therefore laser structures and devices have to be designed according to new requirements. The epitaxial structures including the design of the laser bars and the single emitters as well as epitaxial growth process are optimized to enhance the laser performance. Important parameters include the efficiency, the maximum output power, the wavelength stability and finally the reproducibility of the whole manufacturing process. Single emitters have been developed in the wavelength range around 940 nm. For laser bars the wavelength ranges around 880 nm and 1060 nm are under consideration. A wavelength stabilization for 976 nm laser devices is developed.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
M. Zorn, R. Hülsewede, O. Hirsekorn, J. Sebastian, and P. Hennig "High-power single emitters and laser bars with improved performance developed at JENOPTIK", Proc. SPIE 8241, High-Power Diode Laser Technology and Applications X, 824110 (8 February 2012); https://doi.org/10.1117/12.910083
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CITATIONS
Cited by 4 scholarly publications and 1 patent.
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KEYWORDS
Semiconductor lasers

Semiconducting wafers

Laser development

Aluminum

Reflectivity

Fiber lasers

Quantum wells

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