VLED for Si wafer-level packaging

Chen-Fu Chu; Chiming Chen; Jui-Kang Yen; Yung-Wei Chen; Chingfu Tsou; Chunming Chang; Trung Doan; Chuong Anh Tran

doi:10.1117/12.910062

27 February 2012 VLED for Si wafer-level packaging

Chen-Fu Chu, Chiming Chen, Jui-Kang Yen, Yung-Wei Chen, Chingfu Tsou, Chunming Chang, Trung Doan, Chuong Anh Tran

Proceedings Volume 8262, Gallium Nitride Materials and Devices VII; 82621J (2012) https://doi.org/10.1117/12.910062
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

In this paper, we introduced the advantages of Vertical Light emitting diode (VLED) on copper alloy with Si-wafer level packaging technologies. The silicon-based packaging substrate starts with a <100> dou-ble-side polished p-type silicon wafer, then anisotropic wet etching technology is done to construct the re-flector depression and micro through-holes on the silicon substrate. The operating voltage, at a typical cur-rent of 350 milli-ampere (mA), is 3.2V. The operation voltage is less than 3.7V under higher current driving conditions of 1A. The VLED chip on Si package has excellent heat dissipation and can be operated at high currents up to 1A without efficiency degradation. The typical spatial radiation pattern emits a uniform light lambertian distribution from -65° to 65° which can be easily fit for secondary optics. The correlated color temperature (CCT) has only 5% variation for daylight and less than 2% variation for warm white, when the junction temperature is increased from 25°C to 110°C, suggesting a stable CCT during operation for general lighting application. Coupled with aspheric lens and micro lens array in a wafer level process, it has almost the same light distribution intensity for special secondary optics lighting applications. In addition, the ul-tra-violet (UV) VLED, featuring a silicon substrate and hard glass cover, manufactured by wafer level pack-aging emits high power UV wavelengths appropriate for curing, currency, document verification, tanning, medical, and sterilization applications.

Citation Download Citation

Chen-Fu Chu, Chiming Chen, Jui-Kang Yen, Yung-Wei Chen, Chingfu Tsou, Chunming Chang, Trung Doan, and Chuong Anh Tran "VLED for Si wafer-level packaging", Proc. SPIE 8262, Gallium Nitride Materials and Devices VII, 82621J (27 February 2012); https://doi.org/10.1117/12.910062

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KEYWORDS

Silicon

Semiconducting wafers

Light emitting diodes

Packaging

Ultraviolet radiation

Gallium nitride

Copper

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