Photo-pumped GaAs1&#8722;xBix lasing operation with low-temperature-dependent oscillation wavelength

Yoriko Tominaga; Kunishige Oe; Masahiro Yoshimoto

doi:10.1117/12.907098

7 February 2012 Photo-pumped GaAs_1&-xBi_x lasing operation with low-temperature-dependent oscillation wavelength

Yoriko Tominaga, Kunishige Oe, Masahiro Yoshimoto

Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827702 (2012) https://doi.org/10.1117/12.907098
Event: SPIE OPTO, 2012, San Francisco, California, United States

Abstract

We report here the photo-pumped lasing operation of GaAs_1-xBi_x with low-temperature-dependent oscillation wavelengths, and show future prospects for the fabrication of Bi-based lasers. The GaAs_0.975Bi_0.025 active layer was grown at 350 °C by molecular beam epitaxy. The lasing oscillation from a GaAs_0.975Bi_0.025/GaAs semiconductor chip with a Fabry-Perot cavity was observed by photo-pumping. The characteristic temperature of the laser was 83 K in the range between 160 and 240 K. The lasing emission peak energy decreased at a constant rate of -0.18 meV/K, which is 40% of the temperature coefficient of the band gap of GaAs in this temperature range. Above 240 K, the lasing threshold pumping power increased sharply, and the lasing emission peak energy started shifting to higher energies. This result is probably due to carrier behaviors at the GaAs_0.975Bi_0.025/GaAs heterointerface, in which a large valence band offset and an almost flat conduction band offset are expected.

Citation Download Citation

Yoriko Tominaga, Kunishige Oe, and Masahiro Yoshimoto "Photo-pumped GaAs_1&-xBi_x lasing operation with low-temperature-dependent oscillation wavelength", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827702 (7 February 2012); https://doi.org/10.1117/12.907098

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