Paper
8 February 2012 Red-emitting diode lasers with internal surface DBR gratings
Author Affiliations +
Proceedings Volume 8277, Novel In-Plane Semiconductor Lasers XI; 827708 (2012) https://doi.org/10.1117/12.906737
Event: SPIE OPTO, 2012, San Francisco, California, United States
Abstract
Red-emitting diode lasers currently do not offer a small spectral linewidth, which is required in a variety of applications like spectroscopy, interferometry and holography. We will present details of our work on diode lasers with internal surface DBR gratings. These DBR lasers exhibit effective operation of the gratings at four different lasing wavelengths from 632.2 nm to 638.1 nm. 30 μm wide DBR lasers obtain a spectrally stabilized optical output power of 250 mW in pulsed operation. We estimate the reflectivity of the rear grating to exceed 60%.
© (2012) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
D. Feise, W. John, G. Blume, C. Kaspari, J. Fricke, K. Paschke, and G. Erbert "Red-emitting diode lasers with internal surface DBR gratings", Proc. SPIE 8277, Novel In-Plane Semiconductor Lasers XI, 827708 (8 February 2012); https://doi.org/10.1117/12.906737
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Cited by 4 scholarly publications.
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KEYWORDS
Semiconductor lasers

Reflectivity

Pulsed laser operation

Semiconducting wafers

Etching

Photoresist materials

Reactive ion etching

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