CONFERENCE PROCEEDINGS
Advanced Search
Home > Proceedings > Volume 8683 > Article
Paper
12 April 2013 Mask compensation for process flare in 193nm very low k1 lithography
Jeonkyu Lee, Taehyeong Lee, Sangjin Oh, Chunsoo Kang, Jungchan Kim, Jaeseung Choi, Chanha Park, Hyunjo Yang, Donggyu Yim, Munhoe Do, Irene Su, Hua Song, Jung-Hoe Choi, Yongfa Fan, Anthony Chunqing Wang, Sung-Woo Lee, Robert Boone, Kevin Lucas
Author Affiliations +
Proceedings Volume 8683, Optical Microlithography XXVI; 86830F (2013) https://doi.org/10.1117/12.2012463
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States
Abstract
Traditional rule-based and model-based OPC methods only simulate in a very local area (generally less than 1um) to identify and correct for systematic optical or process problems. Despite this limitation, however, these methods have been very successful for many technology generations and have been a major reason for the industry being able to tremendously push down lithographic K1. This is also enabled by overall good across-exposure field lithographic process control which has been able to minimize longer range effects across the field. Now, however, the situation has now become more complex. The lithographic single exposure resolution limit with 1.35NA tools remains about 80nm pitch but the final wafer dimensions and final wafer pitches required in advanced technologies continue to scale down. This is putting severe strain on lithographic process and OPC CD control. Therefore, formerly less important 2nd order effects are now starting to have significant CD control impact if not corrected for. In this paper, we provide examples and discussion of how optical and chemical flare related effects are becoming more problematic, especially at the boundaries of large, dense memory arrays. We then introduce a practical correction method for these systematic effects which reuses some of the recent long range effect correcting OPC techniques developed for EUV pattern correction (such as EUV flare). We next provide analysis of the benefits of these OPC methods for chemical flare issues in 193nm lithography very low K1 lithography. Finally, we summarize our work and briefly mention possible future extensions.
© (2013) COPYRIGHT Society of Photo-Optical Instrumentation Engineers (SPIE). Downloading of the abstract is permitted for personal use only.
Citation Download Citation
Jeonkyu Lee, Taehyeong Lee, Sangjin Oh, Chunsoo Kang, Jungchan Kim, Jaeseung Choi, Chanha Park, Hyunjo Yang, Donggyu Yim, Munhoe Do, Irene Su, Hua Song, Jung-Hoe Choi, Yongfa Fan, Anthony Chunqing Wang, Sung-Woo Lee, Robert Boone, and Kevin Lucas "Mask compensation for process flare in 193nm very low k1 lithography", Proc. SPIE 8683, Optical Microlithography XXVI, 86830F (12 April 2013); https://doi.org/10.1117/12.2012463
ACCESS THE FULL ARTICLE
ORGANIZATIONAL
Sign in with credentials provided by your organization.
INSTITUTIONAL
Select your institution to access the SPIE Digital Library.
SELECT YOUR INSTITUTION
PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.
PERSONAL SIGN IN
No SPIE Account? Create one
PURCHASE THIS CONTENT
SUBSCRIBE TO DIGITAL LIBRARY
50 downloads per 1-year subscription
Members: $195
Non-members: $335 ADD TO CART
25 downloads per 1 - year subscription
Members: $145
Non-members: $250 ADD TO CART
PURCHASE SINGLE ARTICLE
Includes PDF, HTML & Video, when available
Members: $17.00
Non-members: $21.00 ADD TO CART
PROCEEDINGS
 11 PAGES
DOWNLOAD PAPER SAVE TO MY LIBRARY
GET CITATION
Advertisement
Advertisement
RIGHTS & PERMISSIONS
Get copyright permission  Get copyright permission on Copyright Marketplace
KEYWORDS
Optical proximity correction
Lithography
Extreme ultraviolet
Transistors
Critical dimension metrology
Model-based design
193nm lithography
RELATED CONTENT
Subscribe to Digital Library
Receive Erratum Email Alert
Back to Top