Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.

Jos Benschop; Andre Engelen; Hugo Cramer; Michael Kubis; Paul Hinnen; Hans van der Laan; Kaustuve Bhattacharyya; Jan Mulkens

doi:10.1117/12.2011507

12 April 2013 Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.

Jos Benschop, Andre Engelen, Hugo Cramer, Michael Kubis, Paul Hinnen, Hans van der Laan, Kaustuve Bhattacharyya, Jan Mulkens

Author Affiliations +

Proceedings Volume 8683, Optical Microlithography XXVI; 86830P (2013) https://doi.org/10.1117/12.2011507
Event: SPIE Advanced Lithography, 2013, San Jose, California, United States

Abstract

The overlay, CDU and focus requirements for the 20nm node can only be met using a holistic lithography approach whereby full use is made of high-order, field-by-field, scanner correction capabilities. An essential element in this approach is a fast, precise and accurate in-line metrology sensor, capable to measure on product. The capabilities of the metrology sensor as well as the impact on overlay, CD and focus will be shared in this paper.

Citation Download Citation

Jos Benschop, Andre Engelen, Hugo Cramer, Michael Kubis, Paul Hinnen, Hans van der Laan, Kaustuve Bhattacharyya, and Jan Mulkens "Integrated scatterometry for tight overlay and CD control to enable 20-nm node wafer manufacturing.", Proc. SPIE 8683, Optical Microlithography XXVI, 86830P (12 April 2013); https://doi.org/10.1117/12.2011507

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