Paper
27 February 2014 Extremely high current density over 1000 A/cm2 operation in M-GaN LEDs on bulk GaN substrates with low-efficiency droop
Toshiya Yokogawa, Akira Inoue
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Abstract
A high current density over 1000 A/cm2 operation in small chip size m-plane GaN-LED has been successfully demonstrated. The LED with chip size 450 × 450 μm2 has emitted 1353 mW in light output power and 39.2% in external quantum efficiency (EQE) at 1000 A/cm2 (1134 mA). The m-plane GaN-LED has showed asymmetric radiation characteristics. The radiation patterns are controlled by the surface of LED package, the height of LED chip, and striped texture on top m-plane surface.
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Toshiya Yokogawa and Akira Inoue "Extremely high current density over 1000 A/cm2 operation in M-GaN LEDs on bulk GaN substrates with low-efficiency droop", Proc. SPIE 9003, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XVIII, 900316 (27 February 2014); https://doi.org/10.1117/12.2047235
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Cited by 2 scholarly publications.
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KEYWORDS
Light emitting diodes

Polarization

Gallium nitride

External quantum efficiency

Indium gallium nitride

Ceramics

Electrodes

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