CD uniformity optimization at volume ramp up stage for new product introduction

Jin-Soo Kim; Won-Kwang Ma; Young-Sik Kim; Myoung-Soo Kim; Won-Taik Kwon; Sung-Ki Park; Peter Nikolsky; Marian Otter; Maryana Escalante Marun; Roy Anunciado; Kyu-Tae Sun; Greet Storms; Ewould van West

doi:10.1117/12.2057390

2 April 2014 CD uniformity optimization at volume ramp up stage for new product introduction

Jin-Soo Kim, Won-Kwang Ma, Young-Sik Kim, Myoung-Soo Kim, Won-Taik Kwon, Sung-Ki Park, Peter Nikolsky, Marian Otter, Maryana Escalante Marun, Roy Anunciado, Kyu-Tae Sun, Greet Storms, Ewould van West

Author Affiliations +

Proceedings Volume 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII; 905037 (2014) https://doi.org/10.1117/12.2057390
Event: SPIE Advanced Lithography, 2014, San Jose, California, United States

Abstract

In this paper we describe the joint development and optimization of the critical dimension uniformity (CDU) at an advanced 300 mm ArFi semiconductor facility of SK Hynix in the high volume device. As the ITRS CDU specification shrinks, semiconductor companies still need to maintain high wafer yield and high performance (hence market value) even during the introduction phase of a new product. This cannot be achieved without continuous improvement of the on-product CDU as one of the main drivers for yield improvement. ASML Imaging Optimizer is one of the most efficient tools to reach this goal. This paper presents experimental results of post-etch CDU improvement by ASML imaging optimizer for immature photolithography and etch processes on critical features of 20nm node. We will show that CDU improvement potential and measured CDU strongly depend on CD fingerprint stability through wafers, lots and time. However, significant CDU optimization can still be achieved, even for variable CD fingerprints. In this paper we will review point-to-point correlation of CD fingerprints as one of the main indicators for CDU improvement potential. We will demonstrate the value of this indicator by comparing CD correlation between wafers used for Imaging Optimizer dose recipe development, predicted and measured CDU for wafers and lots exposed with various delays ranging from a few days to a month. This approach to CDU optimization helps to achieve higher yield earlier in the new product introduction cycle, enables faster technology ramps and thereby improves product time to market.

Citation Download Citation

Jin-Soo Kim, Won-Kwang Ma, Young-Sik Kim, Myoung-Soo Kim, Won-Taik Kwon, Sung-Ki Park, Peter Nikolsky, Marian Otter, Maryana Escalante Marun, Roy Anunciado, Kyu-Tae Sun, Greet Storms, and Ewould van West "CD uniformity optimization at volume ramp up stage for new product introduction", Proc. SPIE 9050, Metrology, Inspection, and Process Control for Microlithography XXVIII, 905037 (2 April 2014); https://doi.org/10.1117/12.2057390

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available