Stable, High Quantum Efficiency Silicon Photodiodes For Vacuum-UV Applications

Raj Korde; L.Randall Canfield; Brad Wallis

doi:10.1117/12.946887

16 August 1988 Stable, High Quantum Efficiency Silicon Photodiodes For Vacuum-UV Applications

Raj Korde, L.Randall Canfield, Brad Wallis

Proceedings Volume 0932, Ultraviolet Technology II; (1988) https://doi.org/10.1117/12.946887
Event: 1988 Technical Symposium on Optics, Electro-Optics, and Sensors, 1988, Orlando, FL, United States

Abstract

Silicon photodiodes have been developed by defect-free phosphorus diffusion having practically no carrier recombination at the Si-SiO₂ interface or in the front diffused region. The quantum efficiency of these photodiodes was found to be around 120% at 100 nm. Unlike the previously tested silicon photodiodes, the developed photodiodes exhibit extremely stable quantum efficiency over extended periods of time. Currently, we are investigating the possibility of using these photodiodes as vacuum ultraviolet detector standards.

Citation Download Citation

Raj Korde, L.Randall Canfield, and Brad Wallis "Stable, High Quantum Efficiency Silicon Photodiodes For Vacuum-UV Applications", Proc. SPIE 0932, Ultraviolet Technology II, (16 August 1988); https://doi.org/10.1117/12.946887

ACCESS THE FULL ARTICLE

INSTITUTIONAL
Select your institution to access the SPIE Digital Library.

SELECT YOUR INSTITUTION

PERSONAL
Sign in with your SPIE account to access your personal subscriptions or to use specific features such as save to my library, sign up for alerts, save searches, etc.

PERSONAL SIGN IN

No SPIE Account? Create one

PURCHASE THIS CONTENT

SUBSCRIBE TO DIGITAL LIBRARY

50 downloads per 1-year subscription

Members: $195

Non-members: $335 ADD TO CART

25 downloads per 1 - year subscription

Members: $145

Non-members: $250 ADD TO CART

PURCHASE SINGLE ARTICLE

Includes PDF, HTML & Video, when available