Lattice-gate CCDs

William V. Schempp

doi:10.1117/12.172764

1 May 1994 Lattice-gate CCDs

William V. Schempp

Proceedings Volume 2172, Charge-Coupled Devices and Solid State Optical Sensors IV; (1994) https://doi.org/10.1117/12.172764
Event: IS&T/SPIE 1994 International Symposium on Electronic Imaging: Science and Technology, 1994, San Jose, CA, United States

Abstract

A novel arrangement of gates on front-side-illuminated CCDs can leave up to 50% of the active detector area open to the epitaxial layer, allowing for enhanced response in the near UV spectral region. Important physical and operating properties and parameters (quantum efficiency and charge transfer efficiency) of two variations of the basic device are described.

Citation Download Citation

William V. Schempp "Lattice-gate CCDs", Proc. SPIE 2172, Charge-Coupled Devices and Solid State Optical Sensors IV, (1 May 1994); https://doi.org/10.1117/12.172764

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