Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser

Xiao Sun; Qingjiang Chang

doi:10.1117/12.2077646

16 March 2015 Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser

Xiao Sun, Qingjiang Chang

Proceedings Volume 9357, Physics and Simulation of Optoelectronic Devices XXIII; 93570D (2015) https://doi.org/10.1117/12.2077646
Event: SPIE OPTO, 2015, San Francisco, California, United States

Abstract

Incorporation of N into GaInAs results in N-localized-states close to the conduction band minimum. Such strong alloy band edge N-localized-states can locally capture carriers, thus lasing directly occurs from them, leading to dualwavelength emission.

Citation Download Citation

Xiao Sun and Qingjiang Chang "Dual-wavelength GaInNAs semiconductor quantum-well distributed feedback laser", Proc. SPIE 9357, Physics and Simulation of Optoelectronic Devices XXIII, 93570D (16 March 2015); https://doi.org/10.1117/12.2077646

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